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PD-96143A
IRF7706GPbF
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Ultra Low On-Resistance
HEXFET ? Power MOSFET
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P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
V DSS
-30V
R DS(on) max
22m ? @V GS = -10V
36m ? @V GS = -4.5V
I D
- 7.0A
-5.6A
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Lead-Free
Halogen-Free
Description
HEXFET ? Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides the de-
signer with an extremely efficient and reliable device
for battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
TSSOP-8
Parameter
Max.
Units
V DS
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 70°C
V GS
T J , T STG
Drain-Source Voltage
Continuous Drain Current, V GS @ -10V
Continuous Drain Current, V GS @ -10V
Pulsed Drain Current ?
Maximum Power Dissipation ?
Maximum Power Dissipation ?
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
-30
-7.0
-5.7
-28
1.51
0.96
0.01
± 20
-55 to + 150
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
Max.
Units
R θ JA
www.irf.com
Maximum Junction-to-Ambient ?
83
°C/W
1
05/15/09
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IRF7706PBF
制造商:International Rectifier 功能描述:MOSFET P-Channel 30V 7A TSSOP8
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功能描述:MOSFET P-CH 30V 7A 8-TSSOP RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
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功能描述:MOSFET MOSFT PCh -30V -7A 22mOhm 48nC
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IRF7707
功能描述:MOSFET P-CH 20V 7A 8-TSSOP RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
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IRF7707PBF
制造商:International Rectifier 功能描述:MOSFET P TSSOP-8
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功能描述:MOSFET P-CH 20V 7A 8-TSSOP RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IRF7707TRPBF
功能描述:MOSFET MOSFT PCh -20V -7A 14.3mOhm 31nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube